Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Engineering

• Field Effect Transistor 100%
• Gate Stack 100%
• Nanowire 100%
• Channel Region 75%
• Nodes 50%
• Quantum Well 50%
• Engineering 25%
• Heterojunctions 25%
• High Current Density 25%
• Switching Speed 25%
• Band Bending 25%
• Energy Band 25%
• Strong Electric Field 25%
• Silicon Layer 25%
• Parasitic Resistance 25%
• Performance Output 25%
• Nanosystems 25%
• Electrostatic Charge 25%
• Developed Device 25%
• Engineering Strain 25%
• Electron Velocity 25%
• Gate Oxide 25%
• Charge Carrier 25%

Material Science

• Nanowire 100%
• Field Effect Transistor 100%
• Quantum Well 50%
• Density 25%
• Oxide Compound 25%
• Heterojunction 25%
• Charge Carrier 25%
• Electron Mobility 25%
• Strained Silicon 25%

Keyphrases

• Channel Region 100%
• Quantum Well Barrier 66%
• Gate-all-around Nanowire FET 33%
• Band Splitting 33%