Exploring H2S Gas Sensing with Graphene Nanoribbon Field Effect Transistors: A Semi-Empirical Simulation Approach

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years, there has been a lot of interest in Graphene Nanoribbon Field Effect Transistors due to their sensitivity, selectivity and real time detection abilities. One area of interest is their potential to sense molecules. In this study we investigate the use of Graphene Nanoribbon Field Effect Transistors as sensors for detecting hydrogen sulfide molecules at various concentrations including one, two and three hydrogen sulfide molecules. To achieve this detection capability, we employ Graphene Nanoribbon Field Effect Transistors sensors with a designed configuration optimized for sensing hydrogen sulfide. These sensors exhibit responses depending on the concentration of hydrogen sulfide molecules present enabling differentiation between various concentrations. Our approach involves using an empirical modeling technique combined with non-equilibrium Greens function calculations to thoroughly analyze the sensing process for different hydrogen sulfide molecule concentrations. Through simulations and analysis our results demonstrate that these Graphene Nanoribbon Field Effect Transistors sensors can effectively detect single, double, and triple hydrogen sulfide molecules. This highlights their potential for applications in detecting hydrogen sulfide gas. To summarize our findings, we have shown that Graphene Nanoribbon Field Effect Transistors have versatility as sensors for detecting varying concentrations of molecules. This opens possibilities for their use, in gas sensing and related fields.

Original languageEnglish
Title of host publication2023 International Conference on Microelectronics, ICM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages243-247
Number of pages5
ISBN (Electronic)9798350380828
DOIs
Publication statusPublished - 2023
Event2023 International Conference on Microelectronics, ICM 2023 - Abu Dhabi, United Arab Emirates
Duration: Nov 17 2023Nov 20 2023

Publication series

NameProceedings of the International Conference on Microelectronics, ICM

Conference

Conference2023 International Conference on Microelectronics, ICM 2023
Country/TerritoryUnited Arab Emirates
CityAbu Dhabi
Period11/17/2311/20/23

Keywords

  • H2S
  • electronic properties
  • field-effect transistor
  • graphene
  • nanoribbon
  • semi-empirical modeling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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