TY - GEN
T1 - Exploring H2S Gas Sensing with Graphene Nanoribbon Field Effect Transistors
T2 - 2023 International Conference on Microelectronics, ICM 2023
AU - Wasfi, Asma
AU - Atef, Mohamed
AU - Awwad, Falah
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In recent years, there has been a lot of interest in Graphene Nanoribbon Field Effect Transistors due to their sensitivity, selectivity and real time detection abilities. One area of interest is their potential to sense molecules. In this study we investigate the use of Graphene Nanoribbon Field Effect Transistors as sensors for detecting hydrogen sulfide molecules at various concentrations including one, two and three hydrogen sulfide molecules. To achieve this detection capability, we employ Graphene Nanoribbon Field Effect Transistors sensors with a designed configuration optimized for sensing hydrogen sulfide. These sensors exhibit responses depending on the concentration of hydrogen sulfide molecules present enabling differentiation between various concentrations. Our approach involves using an empirical modeling technique combined with non-equilibrium Greens function calculations to thoroughly analyze the sensing process for different hydrogen sulfide molecule concentrations. Through simulations and analysis our results demonstrate that these Graphene Nanoribbon Field Effect Transistors sensors can effectively detect single, double, and triple hydrogen sulfide molecules. This highlights their potential for applications in detecting hydrogen sulfide gas. To summarize our findings, we have shown that Graphene Nanoribbon Field Effect Transistors have versatility as sensors for detecting varying concentrations of molecules. This opens possibilities for their use, in gas sensing and related fields.
AB - In recent years, there has been a lot of interest in Graphene Nanoribbon Field Effect Transistors due to their sensitivity, selectivity and real time detection abilities. One area of interest is their potential to sense molecules. In this study we investigate the use of Graphene Nanoribbon Field Effect Transistors as sensors for detecting hydrogen sulfide molecules at various concentrations including one, two and three hydrogen sulfide molecules. To achieve this detection capability, we employ Graphene Nanoribbon Field Effect Transistors sensors with a designed configuration optimized for sensing hydrogen sulfide. These sensors exhibit responses depending on the concentration of hydrogen sulfide molecules present enabling differentiation between various concentrations. Our approach involves using an empirical modeling technique combined with non-equilibrium Greens function calculations to thoroughly analyze the sensing process for different hydrogen sulfide molecule concentrations. Through simulations and analysis our results demonstrate that these Graphene Nanoribbon Field Effect Transistors sensors can effectively detect single, double, and triple hydrogen sulfide molecules. This highlights their potential for applications in detecting hydrogen sulfide gas. To summarize our findings, we have shown that Graphene Nanoribbon Field Effect Transistors have versatility as sensors for detecting varying concentrations of molecules. This opens possibilities for their use, in gas sensing and related fields.
KW - H2S
KW - electronic properties
KW - field-effect transistor
KW - graphene
KW - nanoribbon
KW - semi-empirical modeling
UR - https://www.scopus.com/pages/publications/85183330727
UR - https://www.scopus.com/inward/citedby.url?scp=85183330727&partnerID=8YFLogxK
U2 - 10.1109/ICM60448.2023.10378879
DO - 10.1109/ICM60448.2023.10378879
M3 - Conference contribution
AN - SCOPUS:85183330727
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 243
EP - 247
BT - 2023 International Conference on Microelectronics, ICM 2023
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 17 November 2023 through 20 November 2023
ER -