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GaN nanowires synthesized by electroless etching method

  • A. Najar
  • , A. B. Slimane
  • , D. H. Anjum
  • , T. K. Ng
  • , B. S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
Publication statusPublished - 2012
Externally publishedYes
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period5/6/125/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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