GaN nanowires synthesized by electroless etching method

A. Najar, A. B. Slimane, D. H. Anjum, T. K. Ng, B. S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2012
PublisherOptical Society of America (OSA)
PagesJTh2A.101
ISBN (Print)9781557529435
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventCLEO: Applications and Technology, CLEO_AT 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

NameCLEO: Applications and Technology, CLEO_AT 2012

Conference

ConferenceCLEO: Applications and Technology, CLEO_AT 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period5/6/125/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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