TY - GEN
T1 - Graphene for next generation magnetic devices
T2 - 6th International Conference on Renewable Energy: Generation and Applications, ICREGA 2021
AU - Ranjan, Pranay
AU - Sattar, Atif
AU - Benkraouda, Maamar
AU - Garaj, Slaven
AU - Amrane, Noureddine
AU - Sadki, El Hadi S.
N1 - Funding Information:
This work was supported by a United Arab Emirates University-Asian Universities Alliance (UAEU-AUA) Joint Research Project (Grant Number 31R196) and a United Arab University Program for Advanced Research (UPAR) Grant (Number 31S360).
Publisher Copyright:
© 2021 IEEE.
PY - 2021/2/2
Y1 - 2021/2/2
N2 - Graphene, an atomic thin sheet of monolayer carbon atoms, is deemed to replace silicon and revolutionize the electronics industry. It has massless Dirac fermions and exhibits ballistic charge transport, a prerequisite for upcoming futuristic nanodevices, such as field-effect transistors, sensors, etc. However, it lacks an intrinsic electronic bandgap and thus is obsolete for use in these applications. In this work, a first principles study is used to predict the opening of a bandgap in graphene by an engineered introduction of modulations in its lattice. Moreover, it is found that the atomic modulation and the addition of hydrogen atoms at sub-lattices induce magnetism in the graphene sheets. The hydrogen-induced itinerant magnetism (ferromagnetic or antiferromagnetic) depends on the type of defects and the structure of the sheet. This hydrogen-induced spin promotes the role of graphene as a potential material for magnetic memory device applications. Furthermore, with the creation of atomic vacancies and quasilocalized states, it is deemed to allow selective permeation (water/gas) and thus paves the way for its use in-filtration (membrane technology) and hydrogen storage applications.
AB - Graphene, an atomic thin sheet of monolayer carbon atoms, is deemed to replace silicon and revolutionize the electronics industry. It has massless Dirac fermions and exhibits ballistic charge transport, a prerequisite for upcoming futuristic nanodevices, such as field-effect transistors, sensors, etc. However, it lacks an intrinsic electronic bandgap and thus is obsolete for use in these applications. In this work, a first principles study is used to predict the opening of a bandgap in graphene by an engineered introduction of modulations in its lattice. Moreover, it is found that the atomic modulation and the addition of hydrogen atoms at sub-lattices induce magnetism in the graphene sheets. The hydrogen-induced itinerant magnetism (ferromagnetic or antiferromagnetic) depends on the type of defects and the structure of the sheet. This hydrogen-induced spin promotes the role of graphene as a potential material for magnetic memory device applications. Furthermore, with the creation of atomic vacancies and quasilocalized states, it is deemed to allow selective permeation (water/gas) and thus paves the way for its use in-filtration (membrane technology) and hydrogen storage applications.
KW - Graphene
KW - Spintronics
KW - first-principles study
KW - magnetic devices
UR - http://www.scopus.com/inward/record.url?scp=85104556065&partnerID=8YFLogxK
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U2 - 10.1109/ICREGA50506.2021.9388280
DO - 10.1109/ICREGA50506.2021.9388280
M3 - Conference contribution
AN - SCOPUS:85104556065
T3 - 2021 6th International Conference on Renewable Energy: Generation and Applications, ICREGA 2021
SP - 199
EP - 204
BT - 2021 6th International Conference on Renewable Energy
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 February 2021 through 4 February 2021
ER -