Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells

Dewei Chu; Xi Lin; Adnan Younis; Chang Ming Li; Feng Dang; Sean Li

doi:10.1016/j.jssc.2013.10.049

Growth and self-assembly of BaTiO₃ nanocubes for resistive switching memory cells

Dewei Chu, Xi Lin, Adnan Younis, Chang Ming Li, Feng Dang, Sean Li

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

In this work, the self-assembled BaTiO₃ nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58-70, better reliability and stability over various polycrystalline BaTiO₃ nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details.

Original language	English
Pages (from-to)	38-41
Number of pages	4
Journal	Journal of Solid State Chemistry
Volume	214
DOIs	https://doi.org/10.1016/j.jssc.2013.10.049
Publication status	Published - Jun 2014
Externally published	Yes

Keywords

Barium titanate
Resistive switching
Self-assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Physical and Theoretical Chemistry
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jssc.2013.10.049

Cite this

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title = "Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells",

abstract = "In this work, the self-assembled BaTiO3 nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58-70, better reliability and stability over various polycrystalline BaTiO3 nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details.",

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AU - Chu, Dewei

AU - Lin, Xi

AU - Younis, Adnan

AU - Li, Chang Ming

AU - Dang, Feng

AU - Li, Sean

PY - 2014/6

Y1 - 2014/6

N2 - In this work, the self-assembled BaTiO3 nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58-70, better reliability and stability over various polycrystalline BaTiO3 nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details.

AB - In this work, the self-assembled BaTiO3 nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58-70, better reliability and stability over various polycrystalline BaTiO3 nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details.

KW - Barium titanate

KW - Resistive switching

KW - Self-assembly

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