High-performance nanocomposite based memristor with controlled quantum dots as charge traps

Adnan Younis, Dewei Chu, Xi Lin, Jiabao Yi, Feng Dang, Sean Li

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)


We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.

Original languageEnglish
Pages (from-to)2249-2254
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number6
Publication statusPublished - Mar 27 2013
Externally publishedYes


  • charge transport
  • charge traps
  • electrochemical deposition
  • quantum dots
  • resistive switching
  • solvothermal process

ASJC Scopus subject areas

  • General Materials Science


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