High-performance nanocomposite based memristor with controlled quantum dots as charge traps

Adnan Younis; Dewei Chu; Xi Lin; Jiabao Yi; Feng Dang; Sean Li

doi:10.1021/am400168m

High-performance nanocomposite based memristor with controlled quantum dots as charge traps

Adnan Younis, Dewei Chu, Xi Lin, Jiabao Yi, Feng Dang, Sean Li

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO₂) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO₂ QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO₂ QDs were embedded into a ZnO NR array by dip coating to obtain a CeO₂-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO₂ nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.

Original language	English
Pages (from-to)	2249-2254
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	6
DOIs	https://doi.org/10.1021/am400168m
Publication status	Published - Mar 27 2013
Externally published	Yes

Keywords

charge transport
charge traps
electrochemical deposition
quantum dots
resistive switching
solvothermal process

ASJC Scopus subject areas

General Materials Science

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10.1021/am400168m

Cite this

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abstract = "We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.",

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T1 - High-performance nanocomposite based memristor with controlled quantum dots as charge traps

AU - Younis, Adnan

AU - Chu, Dewei

AU - Lin, Xi

AU - Yi, Jiabao

AU - Dang, Feng

AU - Li, Sean

PY - 2013/3/27

Y1 - 2013/3/27

N2 - We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.

AB - We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2-ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.

KW - charge transport

KW - charge traps

KW - electrochemical deposition

KW - quantum dots

KW - resistive switching

KW - solvothermal process

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High-performance nanocomposite based memristor with controlled quantum dots as charge traps

Abstract

Keywords

ASJC Scopus subject areas

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