High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy

Ahmed Atef; Mohamed Atef; Mohamed Abbas; Elsayed Esam M. Khaled

doi:10.1109/JEC-ECC.2016.7518977

High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy

Ahmed Atef, Mohamed Atef, Mohamed Abbas, Elsayed Esam M. Khaled

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dB transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dB gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.

Original language	English
Title of host publication	Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	99-102
Number of pages	4
ISBN (Electronic)	9781467389365
DOIs	https://doi.org/10.1109/JEC-ECC.2016.7518977
Publication status	Published - Jul 21 2016
Externally published	Yes
Event	4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016 - Cairo, Egypt Duration: May 31 2016 → Jun 2 2016

Publication series

Name	Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016

Conference

Conference	4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016
Country/Territory	Egypt
City	Cairo
Period	5/31/16 → 6/2/16

Keywords

Inverter Cascode Amplifier
Near Infrared Spectroscopy
Optical Receiver
Transimpedance Amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Signal Processing
Computer Science Applications

Access to Document

10.1109/JEC-ECC.2016.7518977

Cite this

Atef, A., Atef, M., Abbas, M., & Khaled, E. E. M. (2016). High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy. In Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016 (pp. 99-102). Article 7518977 (Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/JEC-ECC.2016.7518977

High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy. / Atef, Ahmed; Atef, Mohamed; Abbas, Mohamed et al.
Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 99-102 7518977 (Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Atef, A, Atef, M, Abbas, M & Khaled, EEM 2016, High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy. in Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016., 7518977, Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 99-102, 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016, Cairo, Egypt, 5/31/16. https://doi.org/10.1109/JEC-ECC.2016.7518977

Atef A, Atef M, Abbas M, Khaled EEM. High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy. In Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 99-102. 7518977. (Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016). doi: 10.1109/JEC-ECC.2016.7518977

Atef, Ahmed ; Atef, Mohamed ; Abbas, Mohamed et al. / High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy. Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 99-102 (Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016).

@inproceedings{8879b7903ee242389a319074ca1cd804,

title = "High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy",

abstract = "This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dB transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dB gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.",

keywords = "Inverter Cascode Amplifier, Near Infrared Spectroscopy, Optical Receiver, Transimpedance Amplifier",

author = "Ahmed Atef and Mohamed Atef and Mohamed Abbas and Khaled, {Elsayed Esam M.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016 ; Conference date: 31-05-2016 Through 02-06-2016",

year = "2016",

month = jul,

day = "21",

doi = "10.1109/JEC-ECC.2016.7518977",

language = "English",

series = "Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "99--102",

booktitle = "Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016",

}

TY - GEN

T1 - High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy

AU - Atef, Ahmed

AU - Atef, Mohamed

AU - Abbas, Mohamed

AU - Khaled, Elsayed Esam M.

PY - 2016/7/21

Y1 - 2016/7/21

N2 - This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dB transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dB gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.

AB - This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dB transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dB gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.

KW - Inverter Cascode Amplifier

KW - Near Infrared Spectroscopy

KW - Optical Receiver

KW - Transimpedance Amplifier

UR - http://www.scopus.com/inward/record.url?scp=84991825016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991825016&partnerID=8YFLogxK

U2 - 10.1109/JEC-ECC.2016.7518977

DO - 10.1109/JEC-ECC.2016.7518977

M3 - Conference contribution

AN - SCOPUS:84991825016

T3 - Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016

SP - 99

EP - 102

BT - Proceedings of the 2016 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 4th International Japan-Egypt Conference on Electronic, Communication and Computers, JEC-ECC 2016

Y2 - 31 May 2016 through 2 June 2016

ER -

High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this