Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Muhammad Shafa, S. Assa Aravindh, Mohamed N. Hedhili, Saleh T. Mahmoud, Yi Pan, Tien Khee Ng, Boon S. Ooi, Adel Najar

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.

Original languageEnglish
Pages (from-to)4614-4625
Number of pages12
JournalInternational Journal of Hydrogen Energy
Volume46
Issue number5
DOIs
Publication statusPublished - Jan 19 2021

Keywords

  • DFT
  • H sensor
  • High sensitivity
  • Porous GaN
  • Surface functionalization

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

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