InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

P. Hazdra; J. Oswald; M. Atef; K. Kuldová; A. Hospodková; E. Hulicius; J. Pangrác

doi:10.1016/j.mseb.2007.08.021

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Optical properties of metalorganic vapor phase epitaxy grown InAs quantum dots in GaAs covered by thin In_xGa_1-xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. Results show that the increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 μm and narrows the photoluminescence linewidth. To interpret photoluminescence data, we developed a simulation model of our quantum dot structure, which was calibrated using results of atomic force microscopy, photoluminescence and photoreflectance measurements. Simulations have shown that the strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which is significantly increasing when the In content in the strain reducing layer grows.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	147
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2007.08.021
Publication status	Published - Feb 15 2008
Externally published	Yes

Keywords

Gallium arsenide
Indium arsenide
Metalorganic vapor phase epitaxy
Optical properties
Quantum dots

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2007.08.021

Cite this

Hazdra, P, Oswald, J, Atef, M, Kuldová, K, Hospodková, A, Hulicius, E & Pangrác, J 2008, 'InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 147, no. 2-3, pp. 175-178. https://doi.org/10.1016/j.mseb.2007.08.021

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title = "InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance",

abstract = "Optical properties of metalorganic vapor phase epitaxy grown InAs quantum dots in GaAs covered by thin InxGa1-xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. Results show that the increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 μm and narrows the photoluminescence linewidth. To interpret photoluminescence data, we developed a simulation model of our quantum dot structure, which was calibrated using results of atomic force microscopy, photoluminescence and photoreflectance measurements. Simulations have shown that the strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which is significantly increasing when the In content in the strain reducing layer grows.",

keywords = "Gallium arsenide, Indium arsenide, Metalorganic vapor phase epitaxy, Optical properties, Quantum dots",

author = "P. Hazdra and J. Oswald and M. Atef and K. Kuldov{\'a} and A. Hospodkov{\'a} and E. Hulicius and J. Pangr{\'a}c",

note = "Funding Information: This work was supported by the grant no. 202/06/0718 of the Grant Agency of the Czech Republic, by the Research Program MSM 6840770014, the GAAV grant no. 101630601, IAA 100100719, and the institutional research project AV0Z1-010-914. We thank to K. Melichar for the MOVPE samples preparation, T. Mates and V. Komarnitskyy for AFM measurements, and T. {\v S}ime{\v c}ek for English corrections and fruitful discussion.",

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doi = "10.1016/j.mseb.2007.08.021",

language = "English",

volume = "147",

pages = "175--178",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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T1 - InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

AU - Hazdra, P.

AU - Oswald, J.

AU - Atef, M.

AU - Kuldová, K.

AU - Hospodková, A.

AU - Hulicius, E.

AU - Pangrác, J.

N1 - Funding Information: This work was supported by the grant no. 202/06/0718 of the Grant Agency of the Czech Republic, by the Research Program MSM 6840770014, the GAAV grant no. 101630601, IAA 100100719, and the institutional research project AV0Z1-010-914. We thank to K. Melichar for the MOVPE samples preparation, T. Mates and V. Komarnitskyy for AFM measurements, and T. Šimeček for English corrections and fruitful discussion.

PY - 2008/2/15

Y1 - 2008/2/15

N2 - Optical properties of metalorganic vapor phase epitaxy grown InAs quantum dots in GaAs covered by thin InxGa1-xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. Results show that the increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 μm and narrows the photoluminescence linewidth. To interpret photoluminescence data, we developed a simulation model of our quantum dot structure, which was calibrated using results of atomic force microscopy, photoluminescence and photoreflectance measurements. Simulations have shown that the strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which is significantly increasing when the In content in the strain reducing layer grows.

AB - Optical properties of metalorganic vapor phase epitaxy grown InAs quantum dots in GaAs covered by thin InxGa1-xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. Results show that the increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 μm and narrows the photoluminescence linewidth. To interpret photoluminescence data, we developed a simulation model of our quantum dot structure, which was calibrated using results of atomic force microscopy, photoluminescence and photoreflectance measurements. Simulations have shown that the strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which is significantly increasing when the In content in the strain reducing layer grows.

KW - Gallium arsenide

KW - Indium arsenide

KW - Metalorganic vapor phase epitaxy

KW - Optical properties

KW - Quantum dots

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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Abstract

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