InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Engineering & Materials Science

• Photoluminescence 100%
• Photoluminescence spectroscopy 32%
• Metallorganic vapor phase epitaxy 27%
• Red Shift 25%
• Luminescence 22%
• Band structure 21%
• Atomic force microscopy 19%
• Linewidth 19%
• Optical properties 19%

Chemical Compounds

• Quantum Dot 54%
• Photoluminescence 47%
• Strain 43%
• Metallorganic Chemical Vapour Deposition 24%
• Simulation 19%
• Photoluminescence Spectroscopy 16%
• Electronic Band Structure 15%
• Atomic Force Microscopy 12%
• Optical Property 11%
• Luminiscence Type 10%
• Red 10%

Physics & Astronomy

• quantum dots 47%
• photoluminescence 43%
• reflectance 43%
• red shift 12%
• vapor phase epitaxy 12%
• simulation 9%
• atomic force microscopy 9%
• luminescence 9%
• optical properties 8%
• shift 7%
• spectroscopy 6%