Influence of temperature on the electrical properties of selenium thin films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


In the present study, selenium thin films of thickness ∼2.1 μm were synthesized using thermal evaporation method. The presence of selenium in the sample was confirmed using energy dispersive spectrum. Vibration analysis of the structural groups in the samples, before and after annealing, was carried out using Raman spectroscopy. The crystallization of the sample due to annealing was studied using X-ray diffraction. The change in the energy band gap of the film due to annealing was estimated from the Urbach edge of the absorption spectrum. Electrical properties namely conductance and capacitance at different voltages were investigated. Changes in the conductance and capacitance when heating the sample from room temperature to 400 K were studied.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Advanced Materials, ICAM 2019
EditorsKishor Kumar Sadasivuni, Joji Kurian, Sudheesh Vilasini Damodaran, Joshy Joseph, Deepu Joseph, Emmanuel Tom, Deepu Thomas
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735419070
Publication statusPublished - Oct 29 2019
EventInternational Conference on Advanced Materials, ICAM 2019 - Kuthuparamba, Kannur, Kerala, India
Duration: Jun 12 2019Jun 14 2019

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


ConferenceInternational Conference on Advanced Materials, ICAM 2019
CityKuthuparamba, Kannur, Kerala

ASJC Scopus subject areas

  • General Physics and Astronomy


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