In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching

Abdul Kareem K. Soopy; Zhaonan Li; Tianyi Tang; Jiaqian Sun; Bo Xu; Chao Zhao; Adel Najar

doi:10.3390/nano11010126

In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching

Abdul Kareem K. Soopy, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Bo Xu, Chao Zhao, Adel Najar

Department of Physics

Research output: Contribution to journal › Review article › peer-review

3 Citations (Scopus)

Abstract

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Original language	English
Article number	126
Pages (from-to)	1-28
Number of pages	28
Journal	Nanomaterials
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/nano11010126
Publication status	Published - Jan 2021

Keywords

GaN
InGaN
Molecular beam epitaxy
Photochemical etch

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)

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10.3390/nano11010126

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title = "In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching",

abstract = "This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.",

keywords = "GaN, InGaN, Molecular beam epitaxy, Photochemical etch",

author = "Soopy, {Abdul Kareem K.} and Zhaonan Li and Tianyi Tang and Jiaqian Sun and Bo Xu and Chao Zhao and Adel Najar",

note = "Funding Information: Acknowledgments: This work was supported by UAE University through grants UPAR-31S443, 31S214 and 31S306, the National Key Research and Development Program of China (grant number 2018YFB2200104), the “Strategic Priority Research Program” of the Chinese Academy of Sciences (grant number XDB43010102), and the Frontier Science Key Research Program of CAS (grant number QYZDB-SSW-SLH006). Funding Information: Funding: This research was funded by UAE University through grants UPAR-31S443, 31S214 and 31S306, the National Key Research and Development Program of China (grant number 2018YFB2200104), the “Strategic Priority Research Program” of the Chinese Academy of Sciences (grant number XDB43010102), and the Frontier Science Key Research Program of CAS (grant number QYZDB-SSW-SLH006). Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = jan,

doi = "10.3390/nano11010126",

language = "English",

volume = "11",

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T1 - In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching

AU - Soopy, Abdul Kareem K.

AU - Li, Zhaonan

AU - Tang, Tianyi

AU - Sun, Jiaqian

AU - Xu, Bo

AU - Zhao, Chao

AU - Najar, Adel

N1 - Funding Information: Acknowledgments: This work was supported by UAE University through grants UPAR-31S443, 31S214 and 31S306, the National Key Research and Development Program of China (grant number 2018YFB2200104), the “Strategic Priority Research Program” of the Chinese Academy of Sciences (grant number XDB43010102), and the Frontier Science Key Research Program of CAS (grant number QYZDB-SSW-SLH006). Funding Information: Funding: This research was funded by UAE University through grants UPAR-31S443, 31S214 and 31S306, the National Key Research and Development Program of China (grant number 2018YFB2200104), the “Strategic Priority Research Program” of the Chinese Academy of Sciences (grant number XDB43010102), and the Frontier Science Key Research Program of CAS (grant number QYZDB-SSW-SLH006). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/1

Y1 - 2021/1

N2 - This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

AB - This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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KW - InGaN

KW - Molecular beam epitaxy

KW - Photochemical etch

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In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching

Abstract

Keywords

ASJC Scopus subject areas

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