Interface-engineered resistive switching: CeO2 nanocubes as high-performance memory cells

Adnan Younis, Dewei Chu, Ionsecu Mihail, Sean Li

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.

Original languageEnglish
Pages (from-to)9429-9434
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number19
Publication statusPublished - Oct 9 2013
Externally publishedYes


  • cerium oxide
  • hydrothermal process
  • metal oxide
  • oxygen vacancies
  • resistive switching
  • self-assembly

ASJC Scopus subject areas

  • General Materials Science


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