Interface-engineered resistive switching: CeO2 nanocubes as high-performance memory cells

Adnan Younis; Dewei Chu; Ionsecu Mihail; Sean Li

doi:10.1021/am403243g

Interface-engineered resistive switching: CeO₂ nanocubes as high-performance memory cells

Adnan Younis, Dewei Chu, Ionsecu Mihail, Sean Li

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

We reported a novel and facile approach to fabricate self-assembled CeO₂ nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10⁴, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.

Original language	English
Pages (from-to)	9429-9434
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	19
DOIs	https://doi.org/10.1021/am403243g
Publication status	Published - Oct 9 2013
Externally published	Yes

Keywords

cerium oxide
hydrothermal process
metal oxide
oxygen vacancies
resistive switching
self-assembly

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/am403243g

Cite this

@article{592ebb0820a2469ba4c7064fac2a4a32,

title = "Interface-engineered resistive switching: CeO2 nanocubes as high-performance memory cells",

abstract = "We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.",

keywords = "cerium oxide, hydrothermal process, metal oxide, oxygen vacancies, resistive switching, self-assembly",

author = "Adnan Younis and Dewei Chu and Ionsecu Mihail and Sean Li",

year = "2013",

month = oct,

day = "9",

doi = "10.1021/am403243g",

language = "English",

volume = "5",

pages = "9429--9434",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "19",

}

TY - JOUR

T1 - Interface-engineered resistive switching

T2 - CeO2 nanocubes as high-performance memory cells

AU - Younis, Adnan

AU - Chu, Dewei

AU - Mihail, Ionsecu

AU - Li, Sean

PY - 2013/10/9

Y1 - 2013/10/9

N2 - We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.

AB - We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.

KW - cerium oxide

KW - hydrothermal process

KW - metal oxide

KW - oxygen vacancies

KW - resistive switching

KW - self-assembly

UR - http://www.scopus.com/inward/record.url?scp=84885439431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885439431&partnerID=8YFLogxK

U2 - 10.1021/am403243g

DO - 10.1021/am403243g

M3 - Article

AN - SCOPUS:84885439431

SN - 1944-8244

VL - 5

SP - 9429

EP - 9434

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 19

ER -