Interface thermodynamic state-induced high-performance memristors

Adnan Younis, Dewei Chu, Chang Ming Li, Theerthankar Das, Shama Sehar, Mike Manefield, Sean Li

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.

Original languageEnglish
Pages (from-to)1183-1189
Number of pages7
Issue number4
Publication statusPublished - Feb 4 2014
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry


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