Interface thermodynamic state-induced high-performance memristors

Adnan Younis; Dewei Chu; Chang Ming Li; Theerthankar Das; Shama Sehar; Mike Manefield; Sean Li

doi:10.1021/la404389b

Interface thermodynamic state-induced high-performance memristors

Adnan Younis, Dewei Chu, Chang Ming Li, Theerthankar Das, Shama Sehar, Mike Manefield, Sean Li

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

A new class of memristors based on long-range-ordered CeO₂ nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.

Original language	English
Pages (from-to)	1183-1189
Number of pages	7
Journal	Langmuir
Volume	30
Issue number	4
DOIs	https://doi.org/10.1021/la404389b
Publication status	Published - Feb 4 2014
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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10.1021/la404389b

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abstract = "A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.",

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T1 - Interface thermodynamic state-induced high-performance memristors

AU - Younis, Adnan

AU - Chu, Dewei

AU - Li, Chang Ming

AU - Das, Theerthankar

AU - Sehar, Shama

AU - Manefield, Mike

AU - Li, Sean

PY - 2014/2/4

Y1 - 2014/2/4

N2 - A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.

AB - A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.

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Interface thermodynamic state-induced high-performance memristors

Abstract

ASJC Scopus subject areas

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