Interfacial redox reactions associated ionic transport in oxide-based memories

Adnan Younis, Dewei Chu, Abdul Hadi Shah, Haiwei Du, Sean Li

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta2O5, SiO2, etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/ reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe3O4 film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag+, while Cu prefers to oxidize into Cu2+ first, followed by Cu/Cu+ oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe3O4-based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.

Original languageEnglish
Pages (from-to)1585-1592
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number2
Publication statusPublished - Jan 18 2017
Externally publishedYes


  • Absorbed moisture
  • Electrochemical metallization
  • Redox process
  • Resistive switching
  • Thin films

ASJC Scopus subject areas

  • General Materials Science


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