TY - GEN
T1 - Investigation of Atomic Layer Futuristic Memory Devices of Binary Chalcogenides WX2(X = S and Se)
T2 - 2022 Advances in Science and Engineering Technology International Conferences, ASET 2022
AU - Kumar, Narender
AU - Saleh, Na'il
AU - Kumar, Arun
AU - Verma, Mohan Lal
AU - Ranjan, Pranay
N1 - Funding Information:
Authors sincerely thanks to the SIESTA team for availability of the code and the Indian Institute of Technology Jodhpur (IITJ) for financial support through SEED grant to Pranay Ranjan. Narender Kumar and Na’il Saleh would like to thanks the support and funding from the National Water Energy Centre (NWEC) at the UAE University (Grant # 12R025).
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We have investigated the spin-dependent structural, electronic and localized-induced magnetic moment in an atomic layer of binary chalcogenide semiconductors, Tungsten sulphide/selenide (WX2, where X= S, Se) using first-principle calculations. It was observed that the addition of fluorine to the WX2 monolayer lattice reduces the bandgap of the material and induced a magnetic moment of ~1 Bohr magneton. Moreover, the reasons behind this magnetic transition from non-magnetic semiconductors to magnetic semiconductors were investigated and discussed. The calculated binding energy reveals that the pristine monolayer is more stable than the fluorine doped WX2 sheet. Also, intermittent energy levels were created due to the fluorine atoms and resulted in p-type acceptor semiconductor behaviour in spin up and n-type donor behaviour in spin-down of WX2 monolayer. It was observed that the unparalleled behaviour of spin can be tuned to suitable applications such as memory devices and spintronics.
AB - We have investigated the spin-dependent structural, electronic and localized-induced magnetic moment in an atomic layer of binary chalcogenide semiconductors, Tungsten sulphide/selenide (WX2, where X= S, Se) using first-principle calculations. It was observed that the addition of fluorine to the WX2 monolayer lattice reduces the bandgap of the material and induced a magnetic moment of ~1 Bohr magneton. Moreover, the reasons behind this magnetic transition from non-magnetic semiconductors to magnetic semiconductors were investigated and discussed. The calculated binding energy reveals that the pristine monolayer is more stable than the fluorine doped WX2 sheet. Also, intermittent energy levels were created due to the fluorine atoms and resulted in p-type acceptor semiconductor behaviour in spin up and n-type donor behaviour in spin-down of WX2 monolayer. It was observed that the unparalleled behaviour of spin can be tuned to suitable applications such as memory devices and spintronics.
KW - Spintronics
KW - Transition Metal Dichalcogenides
KW - Tungsten Sulfide
UR - http://www.scopus.com/inward/record.url?scp=85128405055&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85128405055&partnerID=8YFLogxK
U2 - 10.1109/ASET53988.2022.9735000
DO - 10.1109/ASET53988.2022.9735000
M3 - Conference contribution
AN - SCOPUS:85128405055
T3 - 2022 Advances in Science and Engineering Technology International Conferences, ASET 2022
BT - 2022 Advances in Science and Engineering Technology International Conferences, ASET 2022
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 21 February 2022 through 24 February 2022
ER -
