Investigation of optical and electrical properties of Cobalt-doped Ge-Sb-S thin film

Ishaq Musa, Zaid Qamhieh, Saleh Mahmoud, Mohamad El-Shaer, Ahmad Ayesh, Naser Qamhieh

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Amorphous Germanium Antimony Sulphide (Ge-Sb-S) doped with Cobalt (Co) have been deposited on glass substrates by thermal evaporation technique on a glass substrate. The films deposited onto glass substrates are characterized by Energy Dispersive X-ray Fluorescence Spectrometer, UV–VIS spectrophotometer, Raman spectroscopy, and Capacitance-Voltage Keithley meter. The optical band gap was calculated from the UV–Visible spectrum and found to be 2.05 eV. Raman spectroscopy measurements reveal that a wide band spectrum from 300 to 410 cm −1 centered at 355 cm −1 . The Raman shift peaks at 325 cm −1 and 350 cm −1 are as-signed to the bond stretching mode Sb-S and Ge-S, respectively. In addition, from the obtained Raman spectra it is concluded that the presence of Co doped with Ge-Sb-S. The capacitance and conductance versus voltage measurements were performed at different temperatures. The results show a slight increase in the capacitance with temperature and it reaches a maximum value around 150 °C, and eventually it becomes negative. This behavior is interpreted in terms of the nucleation growth process and the thermally activated conduction process with measured activation energy of 0.79 eV.

Original languageEnglish
Article number102218
JournalResults in Physics
Volume13
DOIs
Publication statusPublished - Jun 2019

Keywords

  • Amorphous chalcogenides
  • Capacitance measurements
  • Cobalt doping
  • Optical band gap
  • Raman spectroscopy

ASJC Scopus subject areas

  • General Physics and Astronomy

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