Investigations of indium tin oxide - Barium strontium titanate - Indium tin oxide heterostructure for tunability

Mahmoud Al Ahmad; Ludovic Salvagnac; Dominique Michau; Mario Maglione; Robert Plana

doi:10.1109/LMWC.2008.922631

Investigations of indium tin oxide - Barium strontium titanate - Indium tin oxide heterostructure for tunability

Mahmoud Al Ahmad, Ludovic Salvagnac, Dominique Michau, Mario Maglione, Robert Plana

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.

Original language	English
Article number	4530631
Pages (from-to)	398-400
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2008.922631
Publication status	Published - Jun 2008
Externally published	Yes

Keywords

Agile components
Barium strontium titanate (BST)
Characterization
Distributed tuning
Indium tin oxide (ITO)
Matching circuits
Material parameters
Metamaterial
Thin film
Tunability
Tunable circuit
Tunable resistor

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2008.922631

Cite this

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title = "Investigations of indium tin oxide - Barium strontium titanate - Indium tin oxide heterostructure for tunability",

abstract = "This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.",

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author = "{Al Ahmad}, Mahmoud and Ludovic Salvagnac and Dominique Michau and Mario Maglione and Robert Plana",

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AU - Maglione, Mario

AU - Plana, Robert

PY - 2008/6

Y1 - 2008/6

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KW - Agile components

KW - Barium strontium titanate (BST)

KW - Characterization

KW - Distributed tuning

KW - Indium tin oxide (ITO)

KW - Matching circuits

KW - Material parameters

KW - Metamaterial

KW - Thin film

KW - Tunability

KW - Tunable circuit

KW - Tunable resistor

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Investigations of indium tin oxide - Barium strontium titanate - Indium tin oxide heterostructure for tunability

Abstract

Keywords

ASJC Scopus subject areas

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