Losses characterization of tunable barium strontium titanate materials integrated on silicon substrate

Mahmoud Al Ahmad, Robert Plana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The optimizations of the growth of barium strontium titanate (BST) on silicon substrate requires very accurate characterization method of its intrinsic losses. The total losses in the structure are computed from its measured tuned RF performance for different applied bias and then a full deembedding of the ohmic losses is carried out by the substraction of the total losses at zero bias, enabling the intrinsic-loss of the BST this film to be extracted. The losses of the BST material is both frequency and voltage dependent. The losses of the BST found to be frequency dependent up to 10 GHz.

Original languageEnglish
Title of host publication2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, SiRF
Pages159-162
Number of pages4
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF - Orlando, FL, United States
Duration: Jan 23 2008Jan 25 2008

Publication series

Name2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systms - Digest of Papers, SiRF

Other

Other2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF
Country/TerritoryUnited States
CityOrlando, FL
Period1/23/081/25/08

Keywords

  • BST
  • Characterization
  • Loss
  • Material parameters
  • Thin film
  • Tunable circuit

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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