Low power and highly reliable gates using arrays of optimally sized transistors

V. Beiu, L. Iordǎconiu, A. Beg, W. Ibrahim, F. Kharbash

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).

    Original languageEnglish
    Title of host publication2012 International Semiconductor Conference, CAS 2012 Proceedings
    Pages433-436
    Number of pages4
    DOIs
    Publication statusPublished - 2012
    Event35th International Semiconductor Conference, CAS 2012 - Sinaia, Romania
    Duration: Oct 15 2012Oct 17 2012

    Publication series

    NameProceedings of the International Semiconductor Conference, CAS
    Volume2

    Conference

    Conference35th International Semiconductor Conference, CAS 2012
    Country/TerritoryRomania
    CitySinaia
    Period10/15/1210/17/12

    Keywords

    • CMOS
    • arrays
    • inverter
    • power
    • sizing

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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