Low-power transimpedance amplifier for near infrared spectroscopy

Mohamed Atef, Ahmed Atef, Mohamed Abbas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper presents the design and the post layout simulation of a high-sensitivity low-power Transimpedance Amplifier (TIA) for frequency domain functional Near Infrared Spectroscopy (FD-fNIRS). It consumes 194 μW from 1.2 V DC supply. This low power will increase the battery life of the NIRS portable system. The proposed TIA achieves 103.3 dBΩ transimpedance gain, 22 MHz bandwidth and 6.3 nA integrated input noise current using a photodiode with 2 pF capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology occupying an area of 0.0012 mm2. Post amplifier stages are presented to increase the total gain and to interface the ADC in the next stage. The complete receiver achieves 120.6 dBΩ gain, 19.9 MHz bandwidth, 6.6 nA total input noise and consumes 2.4 mW from 1.2 V DC supply.

Original languageEnglish
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2423-2426
Number of pages4
ISBN (Electronic)9781479953400
DOIs
Publication statusPublished - Jul 29 2016
Externally publishedYes
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: May 22 2016May 25 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Other

Other2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
Country/TerritoryCanada
CityMontreal
Period5/22/165/25/16

Keywords

  • Near Infrared spectroscopy (NIRS)
  • Optical Receiver
  • Transimpedance Amplifier (TIA)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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