LSMO thin film tunability characterization a integrated on silicon substrate

Mahmoud Al Ahmad, Young Taek Lee, Chae Il Cheon, Eui Jung Yun, Robert Plana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

LSMO thin films materials have a strong interaction between their electrical and magnetic properties that could be translated into innovative tunable components. The knowledge of the electroactive and magnetoactive properties of these materials is essential for modeling and design of their novel baseddevices. The activity of these materials can be described by their electro/magento resistance and magneto capacitance. 400 nm thick LSMO thin film is formed by the chemical solution deposition (CSD). Under electrostatic field, it is assumed that electric current flowing through narrow low resistance path induces intense local magnetic field, resulting in the decrease of film resistance. This letter reports for the tunability of the LSMO resistance versus frequency.

Original languageEnglish
Title of host publication2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers
Pages69-71
Number of pages3
DOIs
Publication statusPublished - Jun 1 2009
Externally publishedYes
Event2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - San Diego, CA, United States
Duration: Jan 19 2009Jan 21 2009

Publication series

Name2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers

Other

Other2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09
Country/TerritoryUnited States
CitySan Diego, CA
Period1/19/091/21/09

Keywords

  • Electroresistance
  • Ferromagnetic
  • LSMO
  • Magnetoresistance
  • Material parameters
  • Tunability
  • Tunable circuit
  • Tunable inductor
  • Tunable resistor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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