Manipulating resistive states in oxide based resistive memories through defective layers design

Zhemi Xu, Peiyuan Guan, Adnan Younis, Dewei Chu, Sean Li

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

In this work, multilevel switching was achieved by a strategically designed alternative multi-layer structure with pure and Mn-doped SnO2. In this multilayer structure, by utilizing the pure SnO2 layer as an ionic defect diffusion barrier, the migration of ionic defects from the doped layers can be controlled and the intermediate resistance states were stabilized. The multilevel devices exhibit superior performances with a high ON/OFF ratio, low operation voltage and excellent retention. Such an alternative multi-layer structure could be a potential strategy for achieving high-density memories.

Original languageEnglish
Pages (from-to)56390-56394
Number of pages5
JournalRSC Advances
Volume7
Issue number89
DOIs
Publication statusPublished - 2017
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering

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