TY - JOUR
T1 - Maskless Lithography Using Negative Photoresist Material
T2 - Impact of UV Laser Intensity on the Cured Line Width
AU - Mohammed, Mohammed Ziauddin
AU - Mourad, Abdel Hamid I.
AU - Khashan, Saud A.
N1 - Funding Information:
Acknowledgements The authors would like to gratefully acknowledge the support provided by Research Section United Arab Emirates University through research grant no. 31 N130.
Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.
AB - The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.
KW - Curing
KW - Line width
KW - Maskless lithography
KW - Mr-DWL photoresist
KW - Spin coated
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U2 - 10.1007/s40516-018-0058-2
DO - 10.1007/s40516-018-0058-2
M3 - Article
AN - SCOPUS:85044935472
SN - 2196-7229
VL - 5
SP - 133
EP - 142
JO - Lasers in Manufacturing and Materials Processing
JF - Lasers in Manufacturing and Materials Processing
IS - 2
ER -