Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Ryo Matsumoto, Shintaro Adachi, El Hadi S. Sadki, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Yoshihiko Takano

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

Original languageEnglish
Pages (from-to)677-682
Number of pages6
JournalACS Applied Electronic Materials
Issue number3
Publication statusPublished - 2020


  • Focused ion beam
  • Gallium
  • Maskless patterning
  • Silicon
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry


Dive into the research topics of 'Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam'. Together they form a unique fingerprint.

Cite this