Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Ryo Matsumoto; Shintaro Adachi; El Hadi S. Sadki; Sayaka Yamamoto; Hiromi Tanaka; Hiroyuki Takeya; Yoshihiko Takano

doi:10.1021/acsaelm.9b00781

Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Ryo Matsumoto, Shintaro Adachi, El Hadi S. Sadki, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Yoshihiko Takano

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

Original language	English
Pages (from-to)	677-682
Number of pages	6
Journal	ACS Applied Electronic Materials
Volume	2
Issue number	3
DOIs	https://doi.org/10.1021/acsaelm.9b00781
Publication status	Published - 2020

Keywords

Focused ion beam
Gallium
Maskless patterning
Silicon
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

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10.1021/acsaelm.9b00781

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title = "Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam",

abstract = "A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.",

keywords = "Focused ion beam, Gallium, Maskless patterning, Silicon, Superconductivity",

author = "Ryo Matsumoto and Shintaro Adachi and Sadki, {El Hadi S.} and Sayaka Yamamoto and Hiromi Tanaka and Hiroyuki Takeya and Yoshihiko Takano",

note = "Funding Information: The authors thank Prof. Dr. T. Yamaguchi and Dr. Y. Sasama (NIMS) for the early experiments and also thank Mr. J. Aoto (NIT, Yonago College) for the support regarding the sample preparations and measurements. This work was partly supported by JST CREST Grant JPMJCR16Q6, JST-Mirai Program Grant JPMJMI17A2, and JSPS KAKENHI Grant JP17J05926 and 19H02177. Publisher Copyright: {\textcopyright} 2020 American Chemical Society",

year = "2020",

doi = "10.1021/acsaelm.9b00781",

language = "English",

volume = "2",

pages = "677--682",

journal = "ACS Applied Electronic Materials",

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publisher = "American Chemical Society",

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T1 - Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

AU - Matsumoto, Ryo

AU - Adachi, Shintaro

AU - Sadki, El Hadi S.

AU - Yamamoto, Sayaka

AU - Tanaka, Hiromi

AU - Takeya, Hiroyuki

AU - Takano, Yoshihiko

N1 - Funding Information: The authors thank Prof. Dr. T. Yamaguchi and Dr. Y. Sasama (NIMS) for the early experiments and also thank Mr. J. Aoto (NIT, Yonago College) for the support regarding the sample preparations and measurements. This work was partly supported by JST CREST Grant JPMJCR16Q6, JST-Mirai Program Grant JPMJMI17A2, and JSPS KAKENHI Grant JP17J05926 and 19H02177. Publisher Copyright: © 2020 American Chemical Society

PY - 2020

Y1 - 2020

N2 - A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

AB - A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

KW - Focused ion beam

KW - Gallium

KW - Maskless patterning

KW - Silicon

KW - Superconductivity

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Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Abstract

Keywords

ASJC Scopus subject areas

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