Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Ryo Matsumoto; Shintaro Adachi; El Hadi S. Sadki; Sayaka Yamamoto; Hiromi Tanaka; Hiroyuki Takeya; Yoshihiko Takano

doi:10.1021/acsaelm.9b00781

Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Ryo Matsumoto
, Shintaro Adachi
, El Hadi S. Sadki
, Sayaka Yamamoto
, Hiromi Tanaka
, Hiroyuki Takeya
, Yoshihiko Takano

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

Original language	English
Pages (from-to)	677-682
Number of pages	6
Journal	ACS Applied Electronic Materials
Volume	2
Issue number	3
DOIs	https://doi.org/10.1021/acsaelm.9b00781
Publication status	Published - 2020

Keywords

Focused ion beam
Gallium
Maskless patterning
Silicon
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

Access to Document

10.1021/acsaelm.9b00781

Cite this

@article{0b657dce310a4d588c75c81f7f5744b2,

title = "Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam",

abstract = "A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.",

keywords = "Focused ion beam, Gallium, Maskless patterning, Silicon, Superconductivity",

author = "Ryo Matsumoto and Shintaro Adachi and Sadki, \{El Hadi S.\} and Sayaka Yamamoto and Hiromi Tanaka and Hiroyuki Takeya and Yoshihiko Takano",

note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society",

year = "2020",

doi = "10.1021/acsaelm.9b00781",

language = "English",

volume = "2",

pages = "677--682",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

AU - Matsumoto, Ryo

AU - Adachi, Shintaro

AU - Sadki, El Hadi S.

AU - Yamamoto, Sayaka

AU - Tanaka, Hiromi

AU - Takeya, Hiroyuki

AU - Takano, Yoshihiko

PY - 2020

Y1 - 2020

N2 - A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

AB - A direct patterning technique of gallium-irradiated superconducting silicon has been established by a focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line- and square-shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at a temperature of 7 K. The line pattern exhibited a signature of higher onset temperature at around 12 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for a superconducting device.

KW - Focused ion beam

KW - Gallium

KW - Maskless patterning

KW - Silicon

KW - Superconductivity

UR - https://www.scopus.com/pages/publications/85093537392

UR - https://www.scopus.com/pages/publications/85093537392#tab=citedBy

U2 - 10.1021/acsaelm.9b00781

DO - 10.1021/acsaelm.9b00781

M3 - Article

AN - SCOPUS:85093537392

SN - 2637-6113

VL - 2

SP - 677

EP - 682

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 3

ER -

Maskless patterning of gallium-irradiated superconducting silicon using focused ion beam

Abstract

Keywords

ASJC Scopus subject areas

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