MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Alexandros Emboras, Adel Najar, Siddharth Nambiar, Philippe Grosse, Emmanuel Augendre, Charles Leroux, Barbara De Salvo, Roch Espiau De Lamaestre

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We study the electro optical properties of a Metal-Nitride- Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si3N4 layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm -1), in good agreement with predictions using ellipsometric optical constants of Cu.

Original languageEnglish
Pages (from-to)13612-13621
Number of pages10
JournalOptics Express
Issue number13
Publication statusPublished - Jun 18 2012
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices'. Together they form a unique fingerprint.

Cite this