MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Alexandros Emboras; Adel Najar; Siddharth Nambiar; Philippe Grosse; Emmanuel Augendre; Charles Leroux; Barbara De Salvo; Roch Espiau De Lamaestre

doi:10.1364/OE.20.013612

MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Alexandros Emboras, Adel Najar, Siddharth Nambiar, Philippe Grosse, Emmanuel Augendre, Charles Leroux, Barbara De Salvo, Roch Espiau De Lamaestre

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We study the electro optical properties of a Metal-Nitride- Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si3N4 layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm ^-1), in good agreement with predictions using ellipsometric optical constants of Cu.

Original language	English
Pages (from-to)	13612-13621
Number of pages	10
Journal	Optics Express
Volume	20
Issue number	13
DOIs	https://doi.org/10.1364/OE.20.013612
Publication status	Published - Jun 18 2012
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.20.013612

Cite this

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title = "MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices",

abstract = "We study the electro optical properties of a Metal-Nitride- Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si3N4 layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm -1), in good agreement with predictions using ellipsometric optical constants of Cu.",

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AU - Emboras, Alexandros

AU - Najar, Adel

AU - Nambiar, Siddharth

AU - Grosse, Philippe

AU - Augendre, Emmanuel

AU - Leroux, Charles

AU - De Salvo, Barbara

AU - De Lamaestre, Roch Espiau

PY - 2012/6/18

Y1 - 2012/6/18

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AB - We study the electro optical properties of a Metal-Nitride- Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si3N4 layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm -1), in good agreement with predictions using ellipsometric optical constants of Cu.

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MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Abstract

ASJC Scopus subject areas

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