Multiple negative differential resistances in crossed carbon nanotubes

M. Al Ahmad, D. Dragoman, M. Dragoman, R. Plana, J. H. Ting, F. Y. Huang, T. L. Li

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain-source voltage values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals.

Original languageEnglish
Article number114303
JournalJournal of Applied Physics
Volume105
Issue number11
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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