Abstract
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain-source voltage values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals.
Original language | English |
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Article number | 114303 |
Journal | Journal of Applied Physics |
Volume | 105 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)