TY - GEN
T1 - Nanowires piezoelectric constants determination using current-voltage measurements
AU - Al Ahmad, Mahmoud
AU - Al Taradeh, Nedal
AU - Saadat, Irfan
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/29
Y1 - 2015/7/29
N2 - This work demonstrates an original method using the electromechanical properties of the zinc oxide (ZnO) piezoelectric nanowires to characterize its piezoelectric voltage coefficient (d33). The proposed technique utilizes the current-voltage (IV) measurements coupled with the application of variable force to cause a change in the corresponding IV relationship. To conduct the IV measurements, the nanowire is integrated inside a field effect transistor (FET) to form the channel of the device, while it is suspended over a trench. The indentation of the nano-wire causes the mechanical deflection of the suspended nanowire which through the piezoelectric effect changes the IV characteristics of the FET. The extraction of the piezoelectric coefficient is done by modifying the standard FET IV model to incorporate the change in the channel length which is triggered by the piezoelectric behavior. Embedded within this change of length is piezoelectric coefficient and therefore, it becomes straightforward procedure to extract this coefficient from the changes in the IV characteristics.
AB - This work demonstrates an original method using the electromechanical properties of the zinc oxide (ZnO) piezoelectric nanowires to characterize its piezoelectric voltage coefficient (d33). The proposed technique utilizes the current-voltage (IV) measurements coupled with the application of variable force to cause a change in the corresponding IV relationship. To conduct the IV measurements, the nanowire is integrated inside a field effect transistor (FET) to form the channel of the device, while it is suspended over a trench. The indentation of the nano-wire causes the mechanical deflection of the suspended nanowire which through the piezoelectric effect changes the IV characteristics of the FET. The extraction of the piezoelectric coefficient is done by modifying the standard FET IV model to incorporate the change in the channel length which is triggered by the piezoelectric behavior. Embedded within this change of length is piezoelectric coefficient and therefore, it becomes straightforward procedure to extract this coefficient from the changes in the IV characteristics.
KW - Current-voltage curve
KW - field effect transistor (FET)
KW - nanowires
KW - piezoelectric voltage coefficient (d)
KW - piezoelectricity
UR - http://www.scopus.com/inward/record.url?scp=84947944751&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84947944751&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2015.7172720
DO - 10.1109/ISAF.2015.7172720
M3 - Conference contribution
AN - SCOPUS:84947944751
T3 - 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
SP - 257
EP - 260
BT - 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
Y2 - 24 May 2015 through 27 May 2015
ER -