Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, (Formula presented.) (approximately (Formula presented.)), which marks the metal insulator transition (MIT). In close proximity to the (Formula presented.), the conductivity exhibits a linear dependence on the temperature (T). By examining the extrapolated conductivity at the absolute zero temperature (T = 0), denoted as (Formula presented.), as a function of the electron density (Formula presented.), we identify two distinct regimes with varying (Formula presented.) patterns, indicating the existence of two different phases. The transition from one of these two regimes to another, coinciding with (Formula presented.), is abrupt and serves as the focus of our investigation. Our aim is to establish the possibility of a percolation type transition in the 2D-Si-MOSFETs’ sample. In fact, we observed that the model of percolation is applicable only for densities very close to (Formula presented.) (where (Formula presented.) is the linear extrapolation of (Formula presented.)), indicating the percolation type transition essentially represents a phase transition at the zero temperature.