Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using inalas/ingaas/inp material systems at Room Temperature

Physics & Astronomy

• high electron mobility transistors 89%
• room temperature 48%
• radiation 47%
• transistors 45%
• Gunn diodes 40%
• incident radiation 34%
• rectification 31%
• spatial distribution 25%
• plasmons 23%
• electric fields 16%
• sensitivity 16%
• polarization 15%
• performance 12%

Engineering & Materials Science

• High electron mobility transistors 100%
• Radiation 68%
• Plasmons 38%
• Transistors 36%
• Gunn diodes 35%
• Temperature 34%
• Spatial distribution 23%
• Electric fields 19%
• Polarization 19%
• Experiments 7%

Chemical Compounds

• Plasmon 99%
• Wave 80%
• Electric Field 77%
• Polarization 64%
• Ambient Reaction Temperature 48%