On NOR-2 von Neumann multiplexing

Walid Ibrahim; Valeriu Beiu; Azam Beg

doi:10.1109/IDT.2010.5724410

On NOR-2 von Neumann multiplexing

Walid Ibrahim, Valeriu Beiu, Azam Beg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper provides a detailed analysis of the effects threshold voltage variations play on the reliability of bulk MOSFET transistors. It also investigates the consequences of transistor sizing on the reliability of both devices and CMOS gates. These are followed by very accurate device-level (CMOS technology specific) analyses of NOR-2 von Neumann multiplexing with respect to threshold voltage variations, taking into account both the gates' schematic as well as the input vectors. The simulation results reported here show clearly that improving the reliability at the device-level does not necessarily lead to reliability improvement at the gate- and system-level. They also reveal that the effectiveness of von Neumann multiplexing schemes depend to a great extend not only on devices, but also on the gate types (i.e., gates' topologies).

Original language	English
Title of host publication	IDT'10 - 2010 5th International Design and Test Workshop, Proceedings
Pages	67-72
Number of pages	6
DOIs	https://doi.org/10.1109/IDT.2010.5724410
Publication status	Published - 2010
Event	2010 5th International Design and Test Workshop, IDT'10 - Abu Dhabi, United Arab Emirates Duration: Dec 14 2010 → Dec 15 2010

Publication series

Name	IDT'10 - 2010 5th International Design and Test Workshop, Proceedings

Other

Other	2010 5th International Design and Test Workshop, IDT'10
Country/Territory	United Arab Emirates
City	Abu Dhabi
Period	12/14/10 → 12/15/10

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IDT.2010.5724410

Cite this

Ibrahim, W, Beiu, V & Beg, A 2010, On NOR-2 von Neumann multiplexing. in IDT'10 - 2010 5th International Design and Test Workshop, Proceedings., 5724410, IDT'10 - 2010 5th International Design and Test Workshop, Proceedings, pp. 67-72, 2010 5th International Design and Test Workshop, IDT'10, Abu Dhabi, United Arab Emirates, 12/14/10. https://doi.org/10.1109/IDT.2010.5724410

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On NOR-2 von Neumann multiplexing

Abstract

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