On NOR-2 von Neumann multiplexing

Walid Ibrahim, Valeriu Beiu, Azam Beg

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)


    This paper provides a detailed analysis of the effects threshold voltage variations play on the reliability of bulk MOSFET transistors. It also investigates the consequences of transistor sizing on the reliability of both devices and CMOS gates. These are followed by very accurate device-level (CMOS technology specific) analyses of NOR-2 von Neumann multiplexing with respect to threshold voltage variations, taking into account both the gates' schematic as well as the input vectors. The simulation results reported here show clearly that improving the reliability at the device-level does not necessarily lead to reliability improvement at the gate- and system-level. They also reveal that the effectiveness of von Neumann multiplexing schemes depend to a great extend not only on devices, but also on the gate types (i.e., gates' topologies).

    Original languageEnglish
    Title of host publicationIDT'10 - 2010 5th International Design and Test Workshop, Proceedings
    Number of pages6
    Publication statusPublished - 2010
    Event2010 5th International Design and Test Workshop, IDT'10 - Abu Dhabi, United Arab Emirates
    Duration: Dec 14 2010Dec 15 2010

    Publication series

    NameIDT'10 - 2010 5th International Design and Test Workshop, Proceedings


    Other2010 5th International Design and Test Workshop, IDT'10
    Country/TerritoryUnited Arab Emirates
    CityAbu Dhabi

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering


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