Optical Aharonov-Bohm oscillations in InGaAs quantum wells

L. Schweidenback, T. Ali, A. H. Russ, J. R. Murphy, A. N. Cartwright, A. Petrou, C. H. Li, M. K. Yakes, G. Kioseoglou, B. T. Jonker, A. Govorov

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The intensity of photoluminescence emission in InGaAs/GaAs quantum wells (QWs) exhibits local maxima as a function of magnetic field applied perpendicular to the QW plane at low temperatures. These maxima are attributed to the optical Aharonov-Bohm effect associated with spatially indirect excitons that are formed in the vicinity of indium-rich InGaAs islands within the QW. Analysis of the data yields the radius of the exciton. The exciton linewidth also oscillates with the magnetic field and exhibits maxima that are shifted slightly to higher field values than those of the luminescence intensity maxima.

Original languageEnglish
Article number245310
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Publication statusPublished - Jun 15 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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