Abstract
Planar and buried channel porous silicon waveguides (WG) were prepared from p+-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl3-saturated solution. Erbium concentration of around 1020 at/cm3 was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.
Original language | English |
---|---|
Pages (from-to) | 245-248 |
Number of pages | 4 |
Journal | Journal of Luminescence |
Volume | 121 |
Issue number | 2 SPEC. ISS. |
DOIs | |
Publication status | Published - Dec 2006 |
Externally published | Yes |
Keywords
- Erbium
- Porous silicon
- Waveguide
ASJC Scopus subject areas
- Biophysics
- Biochemistry
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics