Optical properties of erbium-doped porous silicon waveguides

A. Najar, J. Charrier, H. Ajlani, N. Lorrain, H. Elhouichet, M. Oueslati, L. Haji

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Planar and buried channel porous silicon waveguides (WG) were prepared from p+-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl3-saturated solution. Erbium concentration of around 1020 at/cm3 was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalJournal of Luminescence
Issue number2 SPEC. ISS.
Publication statusPublished - Dec 2006
Externally publishedYes


  • Erbium
  • Porous silicon
  • Waveguide

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • General Chemistry
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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