Optical study of Erbium-doped-porous silicon based planar waveguides

A. Najar, H. Ajlani, J. Charrier, N. Lorrain, S. Haesaert, M. Oueslati, L. Haji

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Planar waveguides were formed from porous silicon layers obtained on P+ substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.

Original languageEnglish
Pages (from-to)145-149
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-2
Publication statusPublished - Jun 15 2007
Externally publishedYes


  • Erbium
  • Photoluminescence
  • Porous silicon
  • Waveguides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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