Abstract
Planar waveguides were formed from porous silicon layers obtained on P+ substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.
Original language | English |
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Pages (from-to) | 145-149 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 396 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Jun 15 2007 |
Externally published | Yes |
Keywords
- Erbium
- Photoluminescence
- Porous silicon
- Waveguides
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering