Oxygen vacancy diffusion and dynamics in Gd-doped CeO2: A GGA+U study

Xiaoping Han, Maamar Benkraouda, Zongsheng Zhang, Noureddine Amrane

Research output: Contribution to journalArticlepeer-review

Abstract

Using a generalized gradient approximation + Hubbard U method in the framework of density functional theory, we investigate the oxygen vacancy (VO) diffusion and dynamics in 3 × 3 × 3 CeO2 supercells with two Gd substitutions for Ce and an oxygen vacancy. Results show that (i) VO always migrates along the <100> direction, and (ii) VO would rather migrate across the Ce–Ce edges than across Ce–Gd or Gd–Gd edges. Especially, Gd only positively influences the migrations of oxygen vacancies within the third nearest neighbor, indicating that the increased Gd doping is required for extending the positive influence to the long-distance diffusion of oxygen vacancy, which offers an accountable explanation for the enhanced ion conduction experimentally observed in CeO2 with high Gd doping. The negative influence of heavy Gd doping on the VO diffusion is also discussed in detail. The outcome of the current work has implications in illuminating the role of dopants toward expediting the oxygen vacancy diffusion and in promoting the performance in CeO2-based materials and devices for environmentally friendly applications.

Original languageEnglish
Article number115359
JournalSolid State Communications
Volume375
DOIs
Publication statusPublished - Dec 1 2023

Keywords

  • CeO
  • GGA+U
  • Gd doping
  • Oxygen vacancy diffusion

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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