Predicted modifications in the direct and indirect gaps of GaP

B. Bouhafs; M. Ferhat; N. Amrane; B. Khelifa; H. Aourag

doi:10.1016/1350-4495(94)00010-I

Predicted modifications in the direct and indirect gaps of GaP

B. Bouhafs, M. Ferhat, N. Amrane, B. Khelifa, H. Aourag

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors.

Original language	English
Pages (from-to)	791-797
Number of pages	7
Journal	Infrared Physics and Technology
Volume	36
Issue number	4
DOIs	https://doi.org/10.1016/1350-4495(94)00010-I
Publication status	Published - Jun 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/1350-4495(94)00010-I

Cite this

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title = "Predicted modifications in the direct and indirect gaps of GaP",

abstract = "We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors.",

author = "B. Bouhafs and M. Ferhat and N. Amrane and B. Khelifa and H. Aourag",

year = "1995",

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AU - Bouhafs, B.

AU - Ferhat, M.

AU - Amrane, N.

AU - Khelifa, B.

AU - Aourag, H.

PY - 1995/6

Y1 - 1995/6

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AB - We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors.

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Predicted modifications in the direct and indirect gaps of GaP

Abstract

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