We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors.
|Number of pages||7|
|Journal||Infrared Physics and Technology|
|Publication status||Published - Jun 1995|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics