Predicted modifications in the direct and indirect gaps of GaP

B. Bouhafs, M. Ferhat, N. Amrane, B. Khelifa, H. Aourag

Research output: Contribution to journalArticlepeer-review


We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors.

Original languageEnglish
Pages (from-to)791-797
Number of pages7
JournalInfrared Physics and Technology
Issue number4
Publication statusPublished - Jun 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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