TY - JOUR
T1 - Pressure dependence of band gaps in GaAs, GaP, InP, and InAs
AU - Abid, H.
AU - Badi, N.
AU - Soudini, B.
AU - Amrane, N.
AU - Driz, M.
AU - Hammadi, M.
AU - Aourag, H.
AU - Khelifa, B.
PY - 1994/7
Y1 - 1994/7
N2 - We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.
AB - We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.
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U2 - 10.1016/0254-0584(94)90006-X
DO - 10.1016/0254-0584(94)90006-X
M3 - Article
AN - SCOPUS:0028462453
SN - 0254-0584
VL - 38
SP - 162
EP - 168
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 2
ER -