Pressure dependence of band gaps in GaAs, GaP, InP, and InAs

H. Abid, N. Badi, B. Soudini, N. Amrane, M. Driz, M. Hammadi, H. Aourag, B. Khelifa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.

Original languageEnglish
Pages (from-to)162-168
Number of pages7
JournalMaterials Chemistry and Physics
Issue number2
Publication statusPublished - Jul 1994
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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