Pressure dependence of band gaps in GaAs, GaP, InP, and InAs

H. Abid; N. Badi; B. Soudini; N. Amrane; M. Driz; M. Hammadi; H. Aourag; B. Khelifa

doi:10.1016/0254-0584(94)90006-X

Pressure dependence of band gaps in GaAs, GaP, InP, and InAs

H. Abid
, N. Badi
, B. Soudini
, N. Amrane
, M. Driz
, M. Hammadi
, H. Aourag
, B. Khelifa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.

Original language	English
Pages (from-to)	162-168
Number of pages	7
Journal	Materials Chemistry and Physics
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/0254-0584(94)90006-X
Publication status	Published - Jul 1994
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1016/0254-0584(94)90006-X

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@article{08cd97a8d9c841b1a3eaa6761899393e,

title = "Pressure dependence of band gaps in GaAs, GaP, InP, and InAs",

abstract = "We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.",

author = "H. Abid and N. Badi and B. Soudini and N. Amrane and M. Driz and M. Hammadi and H. Aourag and B. Khelifa",

year = "1994",

month = jul,

doi = "10.1016/0254-0584(94)90006-X",

language = "English",

volume = "38",

pages = "162--168",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Pressure dependence of band gaps in GaAs, GaP, InP, and InAs

AU - Abid, H.

AU - Badi, N.

AU - Soudini, B.

AU - Amrane, N.

AU - Driz, M.

AU - Hammadi, M.

AU - Aourag, H.

AU - Khelifa, B.

PY - 1994/7

Y1 - 1994/7

N2 - We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.

AB - We have used an adjusted pseudopotential method to calculate linear and quadratic pressure coefficients of GaAs, GaP, InP and InAs. Our calculation is computationally simple and yields results that are in good agreement with experimental measurements.

UR - https://www.scopus.com/pages/publications/0028462453

UR - https://www.scopus.com/pages/publications/0028462453#tab=citedBy

U2 - 10.1016/0254-0584(94)90006-X

DO - 10.1016/0254-0584(94)90006-X

M3 - Article

AN - SCOPUS:0028462453

SN - 0254-0584

VL - 38

SP - 162

EP - 168

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Pressure dependence of band gaps in GaAs, GaP, InP, and InAs

Abstract

ASJC Scopus subject areas

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