Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors

On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.