Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors

S. T. Alkhafaji; N. Amrane; N. Bouarissa; N. Badi; B. Soudini; M. Sehil; H. Aourag

doi:10.1002/pssb.2221890116

Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors

S. T. Alkhafaji, N. Amrane, N. Bouarissa, N. Badi, B. Soudini, M. Sehil, H. Aourag

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.

Original language	English
Pages (from-to)	139-151
Number of pages	13
Journal	physica status solidi (b)
Volume	189
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221890116
Publication status	Published - May 1 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.2221890116

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abstract = "On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.",

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AU - Alkhafaji, S. T.

AU - Amrane, N.

AU - Bouarissa, N.

AU - Badi, N.

AU - Soudini, B.

AU - Sehil, M.

AU - Aourag, H.

PY - 1995/5/1

Y1 - 1995/5/1

N2 - On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.

AB - On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.

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Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors

Abstract

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