TY - JOUR
T1 - Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors
AU - Alkhafaji, S. T.
AU - Amrane, N.
AU - Bouarissa, N.
AU - Badi, N.
AU - Soudini, B.
AU - Sehil, M.
AU - Aourag, H.
PY - 1995
Y1 - 1995
N2 - On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.
AB - On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.
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U2 - 10.1002/pssb.2221890116
DO - 10.1002/pssb.2221890116
M3 - Article
AN - SCOPUS:84990696091
SN - 0370-1972
VL - 189
SP - 139
EP - 151
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -