Pressure Dependence of Positron Annihilation in Si

F. Benkabou, J. P. Dufour, B. Soudini, N. Amrane, B. Khelifa, H. Aourag

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The pressure dependence of the electron‐positron and the electron‐electron momentum densities in silicon are studied. The observations that the electron‐positron momentum density increases more rapidly with pressure than the electron‐electron momentum density alone is explained in terms of increased positron penetration into the ion cores. The computational technique used here is based on the independent‐particle model (IPM) coupled with the use of the electron pseudo‐wave functions.

Original languageEnglish
Pages (from-to)355-363
Number of pages9
Journalphysica status solidi (b)
Issue number2
Publication statusPublished - Aug 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Pressure Dependence of Positron Annihilation in Si'. Together they form a unique fingerprint.

Cite this