Pressure Dependent Properties of Boron Phosphide

N. Badi; N. Amrane; H. Abid; M. Driz; B. Soudini; B. Khelifa; H. Aourag

doi:10.1002/pssb.2221850209

Pressure Dependent Properties of Boron Phosphide

N. Badi, N. Amrane, H. Abid, M. Driz, B. Soudini, B. Khelifa, H. Aourag

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An adjusted local pseudopotential method is used to obtain the electronic band structure of boron phosphide under pressure. The electronic charge density distributions are computed at several points of the valence and conduction band edges. These charge densities are used to study the modification of the bonding and electronic properties of the compound with respect to different volumes ranging from 0.75 V₀ to V₀.

Original language	English
Pages (from-to)	379-388
Number of pages	10
Journal	physica status solidi (b)
Volume	185
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221850209
Publication status	Published - Oct 1 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.2221850209

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abstract = "An adjusted local pseudopotential method is used to obtain the electronic band structure of boron phosphide under pressure. The electronic charge density distributions are computed at several points of the valence and conduction band edges. These charge densities are used to study the modification of the bonding and electronic properties of the compound with respect to different volumes ranging from 0.75 V0 to V0.",

author = "N. Badi and N. Amrane and H. Abid and M. Driz and B. Soudini and B. Khelifa and H. Aourag",

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AU - Badi, N.

AU - Amrane, N.

AU - Abid, H.

AU - Driz, M.

AU - Soudini, B.

AU - Khelifa, B.

AU - Aourag, H.

PY - 1994/10/1

Y1 - 1994/10/1

N2 - An adjusted local pseudopotential method is used to obtain the electronic band structure of boron phosphide under pressure. The electronic charge density distributions are computed at several points of the valence and conduction band edges. These charge densities are used to study the modification of the bonding and electronic properties of the compound with respect to different volumes ranging from 0.75 V0 to V0.

AB - An adjusted local pseudopotential method is used to obtain the electronic band structure of boron phosphide under pressure. The electronic charge density distributions are computed at several points of the valence and conduction band edges. These charge densities are used to study the modification of the bonding and electronic properties of the compound with respect to different volumes ranging from 0.75 V0 to V0.

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Pressure Dependent Properties of Boron Phosphide

Abstract

ASJC Scopus subject areas

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