Probing complementary memristive characteristics in oxide based memory device via non-conventional chronoamperometry approach

Adnan Younis, Lepeng Zhang, Dewei Chu, Sean Li

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this letter, the resistive switching characteristics of CeO2 based memristor are investigated by utilizing an unusual, non-conventional, and a unique approach of "chronoamperometry." This methodology provides useful insights into memristive characterization for achieving configurable device functionalities such as categorization of minimum threshold potential to prompt switching behaviour, tuneable on/off ratios with accessible multi-level data storage states, etc. Moreover, the analytical studies on carrier drift/diffusion controlled-memristor response and the estimation of time constants at various applied fixed potentials provide tangible evidence to support valence change mechanism in CeO2 based memristors.

Original languageEnglish
Article number033506
JournalApplied Physics Letters
Volume108
Issue number3
DOIs
Publication statusPublished - Jan 18 2016
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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