Probing complementary memristive characteristics in oxide based memory device via non-conventional chronoamperometry approach

In this letter, the resistive switching characteristics of CeO₂ based memristor are investigated by utilizing an unusual, non-conventional, and a unique approach of "chronoamperometry." This methodology provides useful insights into memristive characterization for achieving configurable device functionalities such as categorization of minimum threshold potential to prompt switching behaviour, tuneable on/off ratios with accessible multi-level data storage states, etc. Moreover, the analytical studies on carrier drift/diffusion controlled-memristor response and the estimation of time constants at various applied fixed potentials provide tangible evidence to support valence change mechanism in CeO₂ based memristors.