Abstract
Inert-gas condensation is a novel technique that can be used to produce nanoclusters for different applications. In the present work, dc sputtering combined with inert-gas condensation were used to produce copper oxide nanoclusters inside an ultra-high vacuum compatible system. The size and yield of nanoclusters could be controlled by adjusting the inert-gas flow rate, sputtering discharge power, and aggregation length. The results revealed that nanoclusters were formed as a result of either or both mechanisms: three-body and two-body collisions. Herein, the three-body collision mechanism is responsible for nanocluster seed production, while two-body collision mechanism is responsible for nanocluster growth through atomic condensation and coagulation of nanoclusters. The inert-gas flow rate was found to be the main factor to determine the nanocluster size. The results were compared with a discrete coagulation system model and revealed reasonable agreement. Thin film of copper oxide nanoclusters was fabricated and used to produce a device. Electrical and optical measurements of the device revealed its suitability for practical applications such as solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 207-213 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 636 |
| DOIs | |
| Publication status | Published - Aug 31 2017 |
| Externally published | Yes |
Keywords
- CuO
- Inert-gas condensation
- Nanoclusters
- Sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry