Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

Afzaal Qamar, Dzung Viet Dao, Jisheng Han, Hoang Phuong Phan, Adnan Younis, Philip Tanner, Toan Dinh, Li Wang, Sima Dimitrijev

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in [110] and [112] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111).

Original languageEnglish
Pages (from-to)12394-12398
Number of pages5
JournalJournal of Materials Chemistry C
Issue number48
Publication statusPublished - 2015
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry


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