TY - JOUR
T1 - Realization and characterization of a new organic thin film semiconductor
AU - Tiffour, Imane
AU - Bassaid, Salah
AU - Dehbi, Abdelkader
AU - Belfedal, Abdelkader
AU - Mourad, Abdel Hamid I.
AU - Zeinert, Andreas
N1 - Publisher Copyright:
© 2019 World Scientific Publishing Company.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The main objective of this paper is the realization and characterization of a new organic thin film semiconductor material through the use of an ideal mixture of Acetaminophen/Curcumin utilizing several characterization techniques. From optical analysis, we can conclude that our semiconductor material is comparable and shows good concurrency to the semiconductors applied in technologic applications. In fact, the analysis of the optical measurement (transmittance T) conducting to the optical energy bandgap, Eg, it was found the optical bandgap is around to 2.6±0.02eV. In addition, by using the Wemple Didominico model it was found the dispersion energy E D varied from 5eV to 7eV, the average bandgap EM separated the center of both bands occupied and unoccupied is around 4.5eV and the static refractive index n0 varies from 1.3 to 2 and it dependent on the compactness and transparency of the material.
AB - The main objective of this paper is the realization and characterization of a new organic thin film semiconductor material through the use of an ideal mixture of Acetaminophen/Curcumin utilizing several characterization techniques. From optical analysis, we can conclude that our semiconductor material is comparable and shows good concurrency to the semiconductors applied in technologic applications. In fact, the analysis of the optical measurement (transmittance T) conducting to the optical energy bandgap, Eg, it was found the optical bandgap is around to 2.6±0.02eV. In addition, by using the Wemple Didominico model it was found the dispersion energy E D varied from 5eV to 7eV, the average bandgap EM separated the center of both bands occupied and unoccupied is around 4.5eV and the static refractive index n0 varies from 1.3 to 2 and it dependent on the compactness and transparency of the material.
KW - Thin film
KW - dispersion energy
KW - energy bandgap
KW - optical measurement
KW - organic semiconductor
KW - static refractive index
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U2 - 10.1142/S0218625X18501275
DO - 10.1142/S0218625X18501275
M3 - Article
AN - SCOPUS:85040083422
SN - 0218-625X
VL - 26
JO - Surface Review and Letters
JF - Surface Review and Letters
IS - 1
M1 - 1850127
ER -